发明名称 |
Nonvolatile memory device and method for fabricating the same |
摘要 |
This technology relates to a nonvolatile memory device and a method for fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode configured to have a lower part buried in a groove formed in a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each coupled with the pipe channel layer and extended in a direction substantially perpendicular to the substrate; and a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers. In accordance with this technology, a lower part of the pipe connection gate electrode is buried in the substrate. Accordingly, electric resistance may be reduced because the pipe connection gate electrode may have an increased volume without a substantial increase of the height. |
申请公布号 |
US8921922(B2) |
申请公布日期 |
2014.12.30 |
申请号 |
US201213720362 |
申请日期 |
2012.12.19 |
申请人 |
SK Hynix Inc. |
发明人 |
Kim Min-Soo;Lee Young-Jin;Whang Sung-Jin |
分类号 |
H01L29/792;H01L29/66;G11C16/04;H01L27/115 |
主分类号 |
H01L29/792 |
代理机构 |
IP & T Group LLP |
代理人 |
IP & T Group LLP |
主权项 |
1. A nonvolatile memory device, comprising:
a pipe connection gate electrode configured to have a lower part buried in a groove formed in a substrate; one or more pipe channel layers formed within the pipe connection gate electrode; pairs of main channel layers each coupled with the pipe channel layer and extended in a direction substantially perpendicular to the substrate; and a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, wherein the pipe connection gate electrode comprises a first conductive layer over the substrate, a second conductive layer over the first conductive layer, and a third conductive layer over the second conductive layer. |
地址 |
Gyeonggi-do KR |