| 发明名称 | Tunneling magneto-resistive sensors with buffer layers | ||
| 摘要 | In certain embodiments, a tunneling magneto-resistive (TMR) sensor includes a sensor stack positioned between a seed layer and a cap layer. The seed layer includes a first buffer layer that includes a non-magnetic nickel alloy.;In certain embodiments, a sensor stack includes a top and bottom shield and a seed layer positioned adjacent to the bottom shield. The seed layer has a first buffer layer that includes a nickel alloy. | ||
| 申请公布号 | US8922956(B2) | 申请公布日期 | 2014.12.30 |
| 申请号 | US201113152860 | 申请日期 | 2011.06.03 |
| 申请人 | Seagate Technology LLC | 发明人 | Lu Bin;He Qing;Covington Mark;Xu Yunhao;Tian Wei |
| 分类号 | G11B5/39;G01R33/09 | 主分类号 | G11B5/39 |
| 代理机构 | Mueting, Raasch & Gebhardt, P.A. | 代理人 | Mueting, Raasch & Gebhardt, P.A. |
| 主权项 | 1. A tunneling magneto-resistive (TMR) sensor comprising: a sensor stack positioned between a seed layer and a cap layer, wherein the seed layer includes a first buffer layer comprising a nickel alloy and a second buffer layer comprising a chromium tantalum alloy. | ||
| 地址 | Minneapolis MN US | ||