发明名称 Display substrate and method of manufacturing the same
摘要 A thin film transistor substrate includes a plurality of gate lines, a plurality of data lines, a first and a second thin film transistor being electrically connected with a first pixel and a second pixel, respectively. The first and the second pixels are located on a first and a second side with respect to one of the plurality of gate lines, respectively. The first and the second thin film transistors are located on a first and a second side with respect to one of the plurality of data lines, respectively. The one of the plurality of data lines extends substantially perpendicular to the gate line. The one of the plurality of data lines includes line portions between gate lines adjacent to each other and bent portions circumventing the first and second gate electrodes so as not to overlap with the first and second gate electrodes.
申请公布号 US8922730(B2) 申请公布日期 2014.12.30
申请号 US201213597040 申请日期 2012.08.28
申请人 Samsung Display Co., Ltd. 发明人 Kim In-Woo
分类号 G02F1/1368;G02F1/1343;G02F1/1362 主分类号 G02F1/1368
代理机构 Innovation Counsel LLP 代理人 Innovation Counsel LLP
主权项 1. A thin film transistor substrate comprising: a plurality of gate lines; a plurality of data lines intersecting the plurality of gate lines; a first thin film transistor comprising a first gate electrode and being electrically connected with a first pixel; and a second thin film transistor comprising a second gate electrode and being electrically connected with a second pixel; wherein the first pixel is located on a first side with respect to one of the plurality of gate lines, and the second pixel is located on a second side with respect to the one of the plurality of gate lines, wherein the first thin film transistor and the second thin film transistor are located on different sides, respectively, with respect to one of the plurality of data lines, wherein the one of the plurality of data lines substantially extends perpendicular to the plurality of gate lines, the one of the plurality of data lines including line portions between gate lines adjacent to each other and bent portions circumventing the first and second gate electrodes so as not to overlap with the first and second gate electrodes, wherein at least one of the bent portions has a first portion extending in a first direction, a second portion extending in a second direction, and a third portion extending in a third direction, and wherein the first to third directions are different from one another, and the first and third directions are opposite to each other with reference to an imaginary line perpendicular to the second direction.
地址 KR