发明名称 Apparatus for inspecting light emitting diode and inspecting method using said apparatus
摘要 A light emitting diode (LED) inspection apparatus includes at least one LED including a phosphor applied on an emission surface, a first lighting unit to emit visible light to the LED, a second lighting unit to emit ultraviolet (UV) light to the LED, a photographing unit to generate at least one first image data by photographing the visible light reflected from the LED and to generate at least one second image data by photographing the UV light reflected from the LED, and a determination unit to determine a defect in appearance and emission characteristics of the LED using the at least one first image data and second image data.
申请公布号 US8922643(B2) 申请公布日期 2014.12.30
申请号 US201213412197 申请日期 2012.03.05
申请人 Samsung Electronics Co., Ltd. 发明人 Ji Won Soo;Kwon Oh Seok;Kim Choo Ho
分类号 H04N7/18;G01N21/00;G01N21/88;G01N21/956 主分类号 H04N7/18
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC
主权项 1. A light emitting diode (LED) inspection apparatus comprising: at least one LED comprising a phosphor applied on an emission surface; a first lighting unit to emit visible light to the LED; a second lighting unit to emit ultraviolet (UV) light to the LED; a photographing unit to generate at least one first image data by photographing the visible light reflected from the LED and to generate at least one second image data by photographing the UV light reflected from the LED; and a determination unit to determine a defect in appearance and emission characteristics of the LED using the at least one first image data and second image data, and a determination unit to determine a defect in appearance and emission characteristics of the LED using the at least one first image data and second image data, wherein the determination unit divides the second image data into a plurality of sections and calculates a mean value of pixels comprised in the plurality of sections when the LED is determined to have a normal appearance, and determines that the LED has defective emission characteristics when the mean value is beyond a tolerance range.
地址 Suwon-Si KR