Radiation converter material, radiation converter, radiation detector, use of a radiation converter material and method for producing a radiation converter material

摘要

A radiation converter material includes a semiconductor material used for directly converting radiation quanta into electrical charge carriers. In at least one embodiment, the semiconductor material includes a dopant in a dopant concentration and defect sites produced in a process-dictated manner in such a way that the semiconductor material includes an ohmic resistivity in a range of between 5·107 Ω·cm and 2·109 Ω·cm. Such a radiation converter material is particularly well matched to the requirements in particular in human-medical applications with regard to the high flux rate present and the spectral distribution of the radiation quanta. In at least one embodiment, the invention additionally relates to a radiation converter and a radiation detector, and a use of and a method for producing such a radiation converter material.

主权项

1. A radiation converter material, comprising:
a semiconductor material that directly converts radiation quanta into electrical charge carriers, said semiconductor material including a dopant in a dopant concentration and a plurality of defect sites at a ratio such that the semiconductor material includes an ohmic resistivity in a range of between 1·108 Ω·cm and 1·108 Ω·cm, wherein the plurality of defect sites are created defect sites located at a desired spatial position and in a desired amount.