Method of forming anneal-resistant embedded resistor for non-volatile memory application

摘要

Embodiments of the invention include a nonvolatile memory device that contains nonvolatile resistive random access memory device with improved device performance and lifetime. In some embodiments, nonvolatile resistive random access memory device includes a diode, a metal silicon nitride embedded resistor, and a resistive switching layer disposed between a first electrode layer and a second electrode layer. In some embodiments, the method of forming a resistive random access memory device includes forming a diode, forming a metal silicon nitride embedded resistor, forming a first electrode layer, forming a second electrode layer, and forming a resistive switching layer disposed between the first electrode layer and the second electrode layer.

主权项

1. A method comprising:
forming a resistive switching layer; forming an embedded resistor over the resistive switching layer,
the embedded resistor comprising a metal, silicon, and nitrogen, wherein the metal of the embedded resistor is hafnium; forming an electrode over the embedded resistor; and annealing a stack comprising the resistive switching layer, the embedded resistor, and the electrode at a temperature greater than 700° C.