Semiconductor memory device and method of operating the same

摘要

A semiconductor memory device is provided. The semiconductor memory device includes a memory cell array including cell strings coupled between bit lines and a common source line, each of the cell strings comprising a plurality of memory cells stacked above a substrate. The semiconductor memory device also includes a peripheral circuit configured to supply a negative voltage to one or more word lines coupled to the cell strings and supply a positive voltage to the common source line, wherein the peripheral circuit supplies the positive voltage and the negative voltage before a program operation is performed.

主权项

1. A method of operating a three-dimensional semiconductor memory device, the method comprising:
supplying a negative voltage to one or more word lines coupled to cell strings coupled between bit lines and a common source line; and a positive voltage to the common source line to set channels of the cell strings; and performing a program operation to a selected area of the cell strings.