3D non-volatile storage with transistor decoding structure

摘要

Disclosed herein are 3D stacked memory devices having WL select gates. The 3D stacked memory device could have NAND strings. The WL select gates may be located adjacent to a word line hookup area of a word line plate. The word line plate may be driven by a word line plate driver and may have many word lines. The WL select gates may select individual word lines or groups of word lines. Therefore, smaller units that the entire block may be selected. This may reduce capacitive loading. The WL select gates may include thin film transistors. 3D decoding may be provided in a 3D stacked memory device using the WL select gates.

主权项

1. A 3D stacked non-volatile storage device, comprising:
a plurality of word lines layers comprising a conductor, each word line layer comprising at least one word line plate and a plurality of word lines, each of the word line plates is associated with multiple ones of the plurality of word lines; a plurality of insulator layers alternating with the word line layers in a stack; a plurality of non-volatile storage element strings, each non-volatile storage element string comprises a plurality of non-volatile storage elements, each of the non-volatile storage elements is associated with one of the plurality of word lines; and a plurality of word line select gates, an individual one of the word line select gates coupled between one of the word line plate and a first word line of the multiple ones of the word lines associated with the word line plate to allow selection of the first word line.