Multi-level memory cell with continuously tunable switching

摘要

The present disclosure provides a data storage device that includes multi-level memory cells. The data storage device may include circuitry configured to write data to the multi-level memory cell. The write circuitry may include compliance circuitry configured to implement continuously tunable switching. The write circuitry may be configured to select a compliance mode for the switching, the compliance mode being selected from the group comprising current compliance and voltage compliance.

主权项

1. A method comprising:
writing data to a multi-level memory cell by setting a resistance level of the multi-level cell, the resistance level corresponding to a bit value; and selecting a compliance mode used for setting the resistance level of the multi-level cell, the compliance mode comprising current compliance or voltage compliance.