| 发明名称 | Semiconductor device with buried bit line and method for fabricating the same | ||
| 摘要 | A semiconductor device includes trenches defined in a substrate, buried bit lines partially filling the trenches, a first source/drain layer filling remaining portions of the trenches on the buried bit lines, stack patterns having a channel layer and a second source/drain layer stacked therein and bonded to the first source/drain layer, wherein the channel layer contacts with the first source/drain layer, and word lines crossing with the buried bit lines and disposed adjacent to sidewalls of the channel layer. | ||
| 申请公布号 | US8921930(B2) | 申请公布日期 | 2014.12.30 |
| 申请号 | US201314145430 | 申请日期 | 2013.12.31 |
| 申请人 | SK Hynix Inc. | 发明人 | Hwang Eui-Seong |
| 分类号 | H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119;H01L27/108;H01L29/786 | 主分类号 | H01L29/76 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A semiconductor device comprising: trenches defined in a substrate; buried bit lines partially filling the trenches; a first source/drain layer filling remaining portions of the trenches on the buried bit lines; stack patterns having a channel layer and a second source/drain layer stacked therein and bonded to the first source/drain layer, wherein the channel layer contacts with the first source/drain layer; and word lines crossing with the buried bit lines and disposed adjacent to sidewalls of the channel layer. | ||
| 地址 | Gyeonggi-do KR | ||