Three-dimensional semiconductor memory device with active patterns and electrodes arranged above a substrate

摘要

A three-dimensional semiconductor device comprises active patterns arranged two-dimensionally on a substrate, electrodes arranged three-dimensionally between the active patterns, and memory regions arranged three-dimensionally at intersecting points defined by the active patterns and the electrodes. Each of the active patterns is used as a common current path for an electrical connection to two different memory regions that are formed at the same height from the substrate.

主权项

1. A three-dimensional semiconductor device, comprising:
an electrode structure comprising a plurality of electrodes disposed at a plurality of levels one above the other in the device such that the electrode structure is three-dimensional; a plurality of active patterns each extending vertically through the electrode structure, wherein respective ones of the electrodes are disposed on opposite sides of each of the active patterns; and information storage elements disposed between the electrodes of the electrode structure and the plurality of active patterns, wherein one of the electrodes disposed on one of the opposite sides of each of the active patterns is electrically isolated in the device from one of the electrodes disposed on the other of the opposite sides of the active pattern.