发明名称 |
Method for preparing an absorber thin film for photovoltaic cells |
摘要 |
A method for preparing an A-B-C2 or A2-(Dx,E1-x)-C4 absorber thin film for photovoltaic cells where 0≦x≦1, A is an element or mixture of elements selected within Group 11, B is an element or mixture of elements selected within Group 13, C is an element or mixture of elements selected within Group 16, D is an element or mixture of elements selected within Group 12, and E is an element or mixture of elements selected within Group 14. Said method includes: a step of electrochemically depositing oxide from elements selected from among Groups 11, 12, 13, and 14, a step of annealing in a reducing atmosphere, and a step of supplying an element from Group 16. |
申请公布号 |
US8920624(B2) |
申请公布日期 |
2014.12.30 |
申请号 |
US201113583718 |
申请日期 |
2011.02.17 |
申请人 |
Electricite de France;Centre National de la Recherche Scientifique—CNRS— |
发明人 |
Chassaing Elisabeth;Lincot Daniel |
分类号 |
C25D5/50;C25D9/08;H01L31/0749;C25D3/58;H01L31/032;C25D3/56 |
主分类号 |
C25D5/50 |
代理机构 |
Drinker Biddle & Reath LLP |
代理人 |
Drinker Biddle & Reath LLP |
主权项 |
1. A method for preparing an A-B-C2 or A2-(Dx,E1-x)-C4 absorber thin film for photovoltaic cells where 0≦x≦1, A is an element or a mixture of elements selected from group 11, B is an element or a mixture of elements selected from group 13, C is an element or a mixture of elements selected from group 16, D is an element or a mixture of elements selected from group 12 and E is an element or a mixture of elements selected from group 14, said method comprising the following successive steps:
electrodeposition of an oxide and/or hydroxide thin film of a mixture of elements in oxide and/or hydroxide form comprising, for an A-B-C2 film, at least one element from group 11 and one element from group 13 or, for an A2-(Dx,E1-x)-C4 film, at least one element from group 11, at least one element from group 12 if x>0, and at least one element from group 14 if x<1, annealing of the thin film in a reducing atmosphere, supply of at least one element from group 16 in order to form an A-B-C2 or A2-(Dx,E1-x)-C4 thin film where 0≦x≦1. |
地址 |
Paris FR |