| 摘要 |
Provided is a developer solution for photosensitive resist material including ammoniumhydroxide represented by chemical formula (1). (R^1 is an alkyl group, an alkenyl group, an alkynyl group, an aryl group, an aralkyl group, an arylalkenyl group, a heterocyclic group or NR_2 group, where such groups can be combined. R^2 is a hydrogen atom or a methyl group, R^3 is a methylene group or an ethylene group, R^4-R^6 are an alkyl group or a benzyl group, X is an oxygen atom, a sulfur atom, an ester group, a thioester group or a NH group) By performing development using the developer solution of the present invention, the expansion of the photosensitive resist material, particularly, a chemically amplified positive resist material of a resist layer during developing may be restrained, and the generation of pattern collapse or bridge defects may be restrained, thereby obtaining a pattern having little edge roughness. |
