Apparatus for thermal-slide debonding of temporary bonded semiconductor wafers

摘要

A debonder apparatus for debonding two via an adhesive layer temporary bonded wafers includes a top chuck assembly, a bottom chuck assembly, a static gantry supporting the top chuck assembly, an X-axis carriage drive supporting the bottom chuck assembly, and an X-axis drive control. The top chuck assembly includes a heater and a wafer holder. The X-axis drive control drives horizontally the bottom chuck assembly from a loading zone to a process zone under the top chuck assembly and from the process zone back to the loading zone. A wafer pair comprising a carrier wafer bonded to a device wafer via an adhesive layer is placed upon the bottom chuck assembly at the loading zone oriented so that the unbonded surface of the device wafer is in contact with the bottom assembly and is carried by the X-axis carriage drive to the process zone under the top chuck assembly and the unbonded surface of the carrier wafer is placed in contact with the top chuck assembly. The X-axis drive control initiates horizontal motion of the X-axis carriage drive along the X-axis while heat is applied to the carrier wafer via the heater and while the carrier wafer is held by the top chuck assembly via the wafer holder and thereby causes the device wafer to separate and slide away from the carrier wafer.

主权项

1. A debonder apparatus for debonding two via an adhesive layer temporary bonded wafers, comprising:
a top chuck assembly comprising a heater and a wafer holder; a bottom chuck assembly; a static gantry supporting the top chuck assembly; an X-axis carriage drive supporting the bottom chuck assembly; an X-axis drive control configured to drive horizontally the bottom chuck assembly from a loading zone to a process zone under the top chuck assembly and from the process zone back to the loading zone; wherein a wafer pair comprising a carrier wafer bonded to a device wafer via an adhesive layer is configured to be placed upon said bottom chuck assembly at the loading zone oriented so that an unbonded surface of the device wafer is in contact with the bottom assembly and is configured to be carried by said X-axis carriage drive to the process zone under the top chuck assembly and an unbonded surface of the carrier wafer is placed in contact with the top chuck assembly; and wherein said X-axis drive control is configured to initiate horizontal motion of said X-axis carriage drive along the X-axis while said bonded wafer pair is heated via said heater to a temperature around or above said adhesive layer's melting point and while said carrier wafer is held by said top chuck assembly via said wafer holder and said device wafer is held by said bottom assembly and thereby causes the device wafer to separate and slide away from the carrier wafer; and wherein said bottom chuck assembly comprises a bottom chuck comprising a ceramic material and is designed to slide horizontally along the X-axis upon said X-axis carriage drive and to twist around the Z-axis.