| 发明名称 | Semiconductor laser with cathode metal layer disposed in trench region | ||
| 摘要 | A laser diode includes a substrate and a junction layer disposed on the substrate. The junction layer forms a quantum well of the laser diode. The laser diode includes a junction surface having at least one channel that extends through the junction layer to the substrate. The at least one channel defines an anode region and a cathode region. A cathode electrical junction is disposed on the junction surface at the cathode region, and an anode electrical junction is disposed on the junction surface and coupled to the junction layer at the anode region. A cathode metal layer is disposed in at least a trench region of the channel. The cathode metal layer couples the substrate to the cathode electrical junction. | ||
| 申请公布号 | US8923357(B2) | 申请公布日期 | 2014.12.30 |
| 申请号 | US201313802239 | 申请日期 | 2013.03.13 |
| 申请人 | Seagate Technology LLC | 发明人 | Olson Scott Eugene |
| 分类号 | H01S3/097;H01S5/024;H01S5/20;H01S5/042;G02B6/42;G02B6/43 | 主分类号 | H01S3/097 |
| 代理机构 | Hollingsworth Davis, LLC | 代理人 | Hollingsworth Davis, LLC |
| 主权项 | 1. A laser diode, comprising: a substrate; a junction layer disposed on the substrate, the junction layer forming a quantum well of the laser diode; a junction surface comprising at least one channel that extends through the junction layer to the substrate, the at least one channel defining an anode region and a cathode region; a cathode electrical junction disposed on the junction surface at the cathode region; an anode electrical junction disposed on the junction surface and coupled to the junction layer at the anode region; and a cathode metal layer disposed in at least a trench region of the at least one channel, the cathode metal layer coupling the substrate to the cathode electrical junction. | ||
| 地址 | Cupertino CA US | ||