Dual DNW isolation structure for reducing RF noise on high voltage semiconductor devices

摘要

An isolation structure in a semiconductor device absorbs electronic noise and prevents substrate leakage currents from reaching other devices and signals. The isolation structure provides a duality of deep N-well (“DNW”) isolation structures surrounding an RF device or other source of electronic noise. The DNW isolation structures extend into the substrate at a depth of at least about 2.5 μm and may be coupled to VDD. P+ guard rings are also provided in some embodiments and are provided inside, outside or between the dual DNW isolation structures.

主权项

1. A semiconductor device comprising;
an RF device formed on a substrate; a first deep N-well (DNW) impurity region formed in said substrate and laterally surrounding said RF device; and a second DNW impurity region formed in said substrate and laterally surrounding said first DNW impurity region, wherein no further RF devices are formed between said first DNW impurity region and said second DNW impurity region, wherein said second DNW dopant impurity region includes a width of about 2.0 μm and said first DNW dopant impurity region includes a width that is at least about 2 times as wide as said width of said second DNW dopant impurity region.