发明名称 |
ESD protection device and method for fabricating the same |
摘要 |
An electrostatic discharge (ESD) protection device includes a substrate; a source region of a first conductivity type in the substrate; a drain region of the first conductivity type in the substrate; a gate electrode overlying the substrate between the source region and the drain region; and a core pocket doping region of the second conductivity type within the drain region. The core pocket doping region does not overlap with an edge of the drain region. |
申请公布号 |
US8921941(B2) |
申请公布日期 |
2014.12.30 |
申请号 |
US201113103112 |
申请日期 |
2011.05.09 |
申请人 |
Mediatek Inc. |
发明人 |
Yang Ming-Tzong;Lee Ming-Cheng |
分类号 |
H01L23/62;H01L21/8238;H01L29/66;H01L29/78;H01L29/10;H01L21/8234;H01L29/786;H01L27/02;H01L21/265;H01L29/06;H01L29/08 |
主分类号 |
H01L23/62 |
代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
主权项 |
1. An ESD protection device, comprising:
a substrate; a first well of a first conductivity type in the substrate; a source region of a second conductivity type in the first well; a drain region of the second conductivity type; a gate electrode overlying the substrate between the source region and the drain region; a second well of the second conductivity type, wherein the second well is positioned between the gate electrode and the drain region and the second well encompasses a first part of the drain region; and a portion of the first well situated between the second well and an edge of an isolation region and encompasses a second part of the drain region; wherein an isolation structure is positioned in the second well between the gate electrode and the drain region. |
地址 |
Science-Based Industrial Park, Hsin-Chu TW |