发明名称 ESD protection device and method for fabricating the same
摘要 An electrostatic discharge (ESD) protection device includes a substrate; a source region of a first conductivity type in the substrate; a drain region of the first conductivity type in the substrate; a gate electrode overlying the substrate between the source region and the drain region; and a core pocket doping region of the second conductivity type within the drain region. The core pocket doping region does not overlap with an edge of the drain region.
申请公布号 US8921941(B2) 申请公布日期 2014.12.30
申请号 US201113103112 申请日期 2011.05.09
申请人 Mediatek Inc. 发明人 Yang Ming-Tzong;Lee Ming-Cheng
分类号 H01L23/62;H01L21/8238;H01L29/66;H01L29/78;H01L29/10;H01L21/8234;H01L29/786;H01L27/02;H01L21/265;H01L29/06;H01L29/08 主分类号 H01L23/62
代理机构 代理人 Hsu Winston;Margo Scott
主权项 1. An ESD protection device, comprising: a substrate; a first well of a first conductivity type in the substrate; a source region of a second conductivity type in the first well; a drain region of the second conductivity type; a gate electrode overlying the substrate between the source region and the drain region; a second well of the second conductivity type, wherein the second well is positioned between the gate electrode and the drain region and the second well encompasses a first part of the drain region; and a portion of the first well situated between the second well and an edge of an isolation region and encompasses a second part of the drain region; wherein an isolation structure is positioned in the second well between the gate electrode and the drain region.
地址 Science-Based Industrial Park, Hsin-Chu TW