Devices with nanocrystals and methods of formation

摘要

Devices can be fabricated using a method of growing nanoscale structures on a semiconductor substrate. According to various embodiments, nucleation sites can be created on a surface of the substrate. The creation of the nucleation sites may include implanting ions with an energy and a dose selected to provide a controllable distribution of the nucleation sites across the surface of the substrate. Nanoscale structures may be grown using the controllable distribution of nucleation sites to seed the growth of the nanoscale structures. According to various embodiments, the nanoscale structures may include at least one of nanocrystals, nanowires, or nanotubes. According to various nanocrystal embodiments, the nanocrystals can be positioned within a gate stack and function as a floating gate for a nonvolatile device. Other embodiments are provided herein.

主权项

1. An electronic device comprising:
a substrate having a pair of diffused regions with a diffusion type opposite that of the substrate; a plurality of dielectric layers disposed over the substrate, the plurality of dielectric layers comprising ion nucleation sites embedded in a surface of the plurality of dielectric layers; a plurality of layers of electrically isolated nanocrystals disposed upon the plurality of dielectric layers, each electrically isolated nanocrystal disposed from a respective ion implanted material of the ion nucleation sites, the ion implanted material being of a material different from the electrically isolated nanocrystals, each layer of the plurality of layers of electrically isolated nanocrystals vertically spaced from the other layers of electrically isolated nanocrystals; and a control gate disposed above the plurality of dielectric layers.