Semiconductor device and method for manufacturing the same

摘要

It is an object to obtain a liquid crystal display device in which a contact defect is reduced, increase in contact resistance is suppressed, and an opening ratio is high. The present invention relates to a liquid crystal display device having a substrate; a thin film transistor provided over the substrate, which includes a gate wiring, a gate insulating film, an island-shaped semiconductor film, a source region, and a drain region; a source wiring which is provided over the substrate and is connected to the source region; a drain electrode which is provided over the substrate and is connected to the drain region; an auxiliary capacitor provided over the substrate; a pixel electrode connected to the drain electrode; and a protective film formed so as to cover the thin film transistor and the source wiring, where the protective film has an opening, and the auxiliary capacitor is formed in the area where the opening is formed.

主权项

1. A method for manufacturing a display device, comprising the steps of:
forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming a first island-shaped semiconductor film and a second island-shaped semiconductor film over the gate insulating film; forming a first source wiring and a first drain electrode in electrical contact with the first island-shaped semiconductor film, and a second source wiring and a second drain electrode in electrical contact with the second island-shaped semiconductor film; and forming a first insulating film over and in contact with the first source wiring and a second insulating film over and in contact with the second source wiring, wherein the first insulating film is spaced from the second insulating film, and wherein the second insulating film overlaps a portion of the first drain electrode.