Solid-state imaging device

摘要

A solid-state imaging device including pixels, each pixel having a reset transistor, a selection transistor, an amplification transistor, and a photoelectric conversion unit. The photoelectric conversion unit has a photoelectric conversion film which performs photoelectric conversion, a pixel electrode formed on the surface of the photoelectric conversion film that faces the semiconductor substrate, and a transparent electrode formed on the surface of the photoelectric conversion film that is opposite to the pixel electrode, and the amplitude of a row reset signal applied to the gate of the reset transistor is smaller than at least one of (a) the maximum voltage applied to the drain of the amplification transistor, (b) the maximum voltage applied to the gate of the selection transistor, (c) the power source voltage applied to an inverting amplifier, and (d) the maximum voltage applied to a transparent electrode.

主权项

1. A solid-state imaging device, comprising:
a plurality of pixels arranged in rows and columns above a semiconductor substrate; a row scanning unit configured to generate a row reset signal; and an inverting amplifier formed for each column, wherein each of the pixels has a reset transistor, a selection transistor, an amplification transistor, and a photoelectric conversion unit, the photoelectric conversion unit has a photoelectric conversion film which performs photoelectric conversion, a pixel electrode formed on a surface of the photoelectric conversion film that faces the semiconductor substrate, and a transparent electrode formed on a surface of the photoelectric conversion film that is opposite to the pixel electrode, the amplification transistor has a gate connected to the pixel electrode, and outputs a signal voltage according to a potential of the pixel electrode to a column signal line via the selection transistor, the row scanning unit is configured to supply the row reset signal to a gate of the reset transistor, and an amplitude of the row reset signal is smaller than at least one of (a) a maximum voltage applied to a drain of the amplification transistor, (b) a maximum voltage applied to a gate of the selection transistor, (c) a power source voltage applied to the inverting amplifier, and (d) a maximum voltage applied to the transparent electrode.