发明名称 Method for producing a composite material, associated composite material and associated semiconductor circuit arrangements
摘要 A method for producing a composite material, associated composite material and associated semiconductor circuit arrangements is disclosed. A plurality of first electrically conducting material particles are applied to a carrier substrate and a second electrically conducting material is galvanically deposited on a surface of the first material particles in such a way that the second material mechanically and electrically bonds the plurality of first material particles to one another.
申请公布号 US8922016(B2) 申请公布日期 2014.12.30
申请号 US201113218222 申请日期 2011.08.25
申请人 Infineon Technologies AG 发明人 Hellmund Oliver;Kraft Daniel;Kroener Friedrich;Santos Rodriguez Francisco Javier;Von Koblinski Carsten
分类号 H01L23/48;H01L29/49;H01L29/739 主分类号 H01L23/48
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A semiconductor chip comprising: a semiconductor substrate; an insulating layer disposed over the semiconductor substrate; an opening formed in the insulating layer, wherein the opening has a depth greater than 100 micrometers; a composite material disposed in the opening, the composite material comprising: first electrically conducting material particles; anda second electrically conducting material; and a semiconductor device disposed in the semiconductor substrate, the semiconductor device electrically connected to the composite material.
地址 Neubiberg DE