发明名称 |
Method for producing a composite material, associated composite material and associated semiconductor circuit arrangements |
摘要 |
A method for producing a composite material, associated composite material and associated semiconductor circuit arrangements is disclosed. A plurality of first electrically conducting material particles are applied to a carrier substrate and a second electrically conducting material is galvanically deposited on a surface of the first material particles in such a way that the second material mechanically and electrically bonds the plurality of first material particles to one another. |
申请公布号 |
US8922016(B2) |
申请公布日期 |
2014.12.30 |
申请号 |
US201113218222 |
申请日期 |
2011.08.25 |
申请人 |
Infineon Technologies AG |
发明人 |
Hellmund Oliver;Kraft Daniel;Kroener Friedrich;Santos Rodriguez Francisco Javier;Von Koblinski Carsten |
分类号 |
H01L23/48;H01L29/49;H01L29/739 |
主分类号 |
H01L23/48 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. A semiconductor chip comprising:
a semiconductor substrate; an insulating layer disposed over the semiconductor substrate; an opening formed in the insulating layer, wherein the opening has a depth greater than 100 micrometers; a composite material disposed in the opening, the composite material comprising:
first electrically conducting material particles; anda second electrically conducting material; and a semiconductor device disposed in the semiconductor substrate, the semiconductor device electrically connected to the composite material. |
地址 |
Neubiberg DE |