Galvanically-isolated device and method for fabricating the same

摘要

A galvanically-isolated device and a method for fabricating the same are provided. The galvanically-isolated device includes a lead frame including a first die-attach pad, a first lead and a second lead. A substrate is disposed on the first die-attach pad. A high-voltage semiconductor capacitor formed on the substrate includes an interconnection structure. The interconnection structure includes an inter-metal dielectric layer structure. A first plate, a second plate and a third plate are formed on the inter-metal dielectric layer structure, separated from each other. The first plate, the second plate and a first portion of the inter-metal dielectric layer structure are composed of a first capacitor. The first plate, the third plate and a second portion of the inter-metal dielectric layer structure are composed of a second capacitor connected in series with the first capacitor.

主权项

1. A galvanically-isolated device, comprising:
a lead frame comprising a first die-attach pad, a first lead and a second lead; a substrate disposed on the first die-attach pad; a high-voltage semiconductor capacitor formed on the substrate, comprising:
an interconnection structure, comprising:
an inter-metal dielectric layer structure; anda first plate, a second plate and a third plate on the inter-metal dielectric layer structure, separated from each other;wherein the first plate, the second plate and a first portion of the inter-metal dielectric layer structure overlapping with both the first plate and the second plate are composed of a first capacitor, andwherein the first plate, the third plate and a second portion of the inter-metal dielectric layer structure overlapping with both the first plate and the third plate are composed of a second capacitor connected in series with the first capacitor; a first bonding wire electrically connected between the second plate and the first lead; a second bonding wire electrically connected between the third plate and the second lead; and a molding compound layer encapsulating the high-voltage semiconductor capacitor, the first die-attach pad, the first bonding wire and the second bonding wire.