发明名称 DISPOSITIVO A SEMICONDUTTORE INTEGRANTE UN PARTITORE RESISTIVO E PROCEDIMENTO DI FABBRICAZIONE DI UN DISPOSITIVO A SEMICONDUTTORE
摘要 A semiconductor device includes: a semiconductor substrate; a high-voltage first resistive structure which extends along a spiral path above the substrate and is separated from the substrate by a first dielectric layer; and a conductive shielding structure, including a plurality of first shielding strips, which are arranged in sequence along respective portions of the first resistive structure and are separated from the first resistive structure by a second dielectric layer.
申请公布号 ITTO20130541(A1) 申请公布日期 2014.12.29
申请号 IT2013TO00541 申请日期 2013.06.28
申请人 STMICROELECTRONICS S.R.L. 发明人 PALUMBO VINCENZO;VENTURATO MIRKO
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