发明名称 |
DISPOSITIVO A SEMICONDUTTORE INTEGRANTE UN PARTITORE RESISTIVO E PROCEDIMENTO DI FABBRICAZIONE DI UN DISPOSITIVO A SEMICONDUTTORE |
摘要 |
A semiconductor device includes: a semiconductor substrate; a high-voltage first resistive structure which extends along a spiral path above the substrate and is separated from the substrate by a first dielectric layer; and a conductive shielding structure, including a plurality of first shielding strips, which are arranged in sequence along respective portions of the first resistive structure and are separated from the first resistive structure by a second dielectric layer. |
申请公布号 |
ITTO20130541(A1) |
申请公布日期 |
2014.12.29 |
申请号 |
IT2013TO00541 |
申请日期 |
2013.06.28 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
PALUMBO VINCENZO;VENTURATO MIRKO |
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