发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE |
摘要 |
<p>One aspect of the present invention includes: a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode part including a first electrode pad which is formed on the upper side of the light emitting structure and is connected to the first conductive semiconductor layer, and a first electrode finger which is extended from the first electrode pad and has a partially opened ring shape; a second electrode part including a second electrode pad which is formed on the upper side of the light emitting structure and is connected to the second conductive semiconductor layer, and a second electrode finger which is extended from the second electrode pad, and has a partially opened ring shape. Either first or second electrode unit is formed to cover the remaining one. The center of the ring shape of at least one of first and second electrode units is formed to be separated from the center of the upper light emitting structure. According to the embodiment, the semiconductor light emitting device increases light efficiency and operation voltage performance by including the improved electrode structure.</p> |
申请公布号 |
KR20140146957(A) |
申请公布日期 |
2014.12.29 |
申请号 |
KR20130069962 |
申请日期 |
2013.06.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, JUNG SUNG;KIM, YONG MIN;SHIN, DONG MYUNG;JUNG, SOO JIN |
分类号 |
H01L33/36;H01L33/38;H01L33/62 |
主分类号 |
H01L33/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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