SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided are a semiconductor device and a method for fabricating the same. A semiconductor device includes an active pattern which is extended from a semiconductor substrate, includes a source and a drain region, and a channel region between them in a point of a horizontal view and a local insulating pattern locally formed between the channel region of the active pattern and the semiconductor substrate in a point of vertical view, a gate electrode which crosses the channel region of the active pattern and the sidewall of the local insulating pattern, a sidewall spacer of both sides of the gate electrode, and a protection spacer which is interposed between the both sidewalls of the gate electrode and the sidewall spacer and is made of a material which has etch selectivity to the sidewall spacer.