| 摘要 |
Provided is a method for manufacturing a semiconductor device, which is capable of increasing the controllability of the concentration of carbon in a film by increasing the yield when a boron carbonitride film or a boron nitride film is formed. The method includes a step of forming a film containing boron, carbon, and nitrogen or a film containing boron and nitrogen on a substrate by performing, a predetermined number of times, a cycle including: supplying source gas including boron and a halogen element to the substrate; and supplying reactive gas formed of carbon, nitrogen, and hydrogen to the substrate. |
