| 摘要 |
FIELD: chemistry.SUBSTANCE: invention relates to the technology of obtaining semiconductor materials and is intended for the controlled growing of threadlike crystals of semiconductors. The method includes the preparation of a semiconductor plate by the application of catalyst particles on its surface with the further placement of the prepared plate into a growth furnace, heating and creation of a longitudinal temperature gradient of 10-100°C/cm in the plate, after that precipitation of a crystallised substance from a vapour phase is realised in accordance with the scheme vapour?drop liquid ?crystal, the molar ratio of the gas phase to hydrogen is set in the interval of 0.005-0.015, with the difference of temperature by the catalyst drop diameter being provided in the range of 0.15-0.4°C.EFFECT: application of the invention will make it possible to facilitate the creation of planar thermometric and tensometric sensors, integrate threadlike crystals into planar technologies of microcircuit manufacturing.6 ex |
