MAGNETIC TUNNEL JUNCTION STRUCTURE HAVING PERPENDICULAR MAGNETIC ANISOTROPY, METHOD OF MANUFACTURING THE SAME AND MAGNETIC DEVICE INCLUDING THE SAME

摘要

Provided are a magnetic tunnel junction (MTJ) structure having vertical magnetic anisotropy, a method for manufacturing the same, and a magnetic device including the same. The MJT structure having vertical magnetic anisotropy comprises: a non-magnetic layer including a first non-magnetic material; a diffusion preventing layer which is located on the non-magnetic layer and includes an oxide material based on the first non-magnetic material; a boron absorbing layer which is located on the diffusion preventing layer; a first ferromagnetic layer which is located on the boron absorbing layer and includes a boron-based ferromagnetic material; a tunneling barrier layer which is located on the first ferromagnetic layer; and a second ferromagnetic layer which is located on the tunneling barrier layer, thereby providing the MTJ structure having an improved magnetic resistance variation ratio as well as improved thermal stability in high temperature annealing.