| 摘要 |
Laser emission device with integrated light modulator comprising: a multilayer waveguide comprising, on a support layer, a first guiding layer, a first doped layer, a second guiding layer of light amplifying material, and a biasing second doped layer opposite the first doped layer, the waveguide comprising a laser amplification section (50), a light modulation section (52) comprising an extraction zone for radiating the light, a transition section (51) inserted between the laser amplification section and the light modulation section, a positive first electrode for injecting a pumping current into the laser amplification section, a positive second electrode for injecting a modulation signal into the modulation section, a negative third electrode, and a reference fourth electrode, the second doped layer comprising an electrical insulation situated in the transition section to form a resistive channel. |
| 主权项 |
1. Laser emission device with integrated light modulator comprising:
a multilayer waveguide, the waveguide extending along a longitudinal direction of the device, the waveguide comprising, on a support layer made of silicon dioxide, a first guiding layer of silicon, a first doped layer, a second guiding layer of light amplifying material, and a biasing second doped layer opposite the first doped layer, the waveguide comprising, along the longitudinal direction a laser amplification section, a light modulation section comprising an extraction zone for radiating the light of a resonant optical mode towards the exterior of the device, and a transition section inserted in the longitudinal direction, between the laser amplification section and the light modulation section, the device also comprising: a positive first electrode coupled to the laser amplification section, a positive DC potential connected to the positive first electrode to inject a pumping current into the laser amplification section, wherein the device also comprises: a positive second electrode coupled to the light modulation section, a base band signal generator connected to the positive second electrode to inject a modulation signal into the modulation section, a negative third electrode coupled to the first doped layer in the modulation section to apply a biasing electrical potential to the first doped layer, the modulation signal being applied between the positive second electrode and the negative third electrode to control the emission of the laser device, and a reference fourth electrode coupled to the first doped layer in the laser amplification section, an earth electrical potential linked to the reference fourth electrode, the pumping current being injected by applying a DC voltage between the fourth reference electrode and the positive first electrode, wherein the second doped layer comprises an electrical insulation situated in the transition section of the waveguide to form a resistive channel, in which the electrical insulation is obtained by a protonated insertion zone of the second doped layer, and the resistive channel exhibits a resistance of between 1 and 10 kΩ, which makes it possible to independently apply the DC voltage to the laser amplification section and the modulation signal to the light modulation section. |
