PERPENDICULAR MAGNETIZATION STORAGE ELEMENT AND STORAGE DEVICE

摘要

A storage element includes a storage layer which has magnetization perpendicular to its film surface and which retains information by a magnetization state of a magnetic substance, a magnetization pinned layer having magnetization perpendicular to its film surface which is used as the basis of the information stored in the storage layer, an interlayer of a non-magnetic substance provided between the storage layer and the magnetization pinned layer, and a cap layer which is provided adjacent to the storage layer at a side opposite to the interlayer and which includes at least two oxide layers. The storage element is configured to store information by reversing the magnetization of the storage layer using spin torque magnetization reversal generated by a current passing in a laminate direction of a layer structure including the storage layer, the interlayer, and the magnetization pinned layer.

主权项

1. A storage element comprising:
a storage portion that includes a storage magnetization, wherein a direction of the storage magnetization is configured to change; a fixed magnetization portion that includes a reference magnetization serving as a reference to the storage magnetization; an intermediate portion provided between the storage portion and the fixed magnetization portion; and a cap portion which is provided adjacent to the storage portion at a side opposite to the intermediate portion and which includes at least two oxide layers, wherein a first oxide layer adjacent to the storage portion includes magnesium oxide, and a different second oxide layer adjacent the first oxide layer includes at least one of tantalum oxide and aluminum oxide.