| 发明名称 |
REFRESH SCHEME FOR MEMORY CELLS WITH WEAK RETENTION TIME |
| 摘要 |
A memory refresh method within a memory controller includes checking a first retention state corresponding to a first memory address and a second retention state corresponding to a second memory address. The memory refresh method also includes performing a refresh operation on a row corresponding to the second memory address when the second retention state indicates a weak retention state. The first memory address corresponds to a refresh counter address, and the second memory address corresponds to a complementary address of the refresh counter address. |
| 申请公布号 |
US2014379978(A1) |
申请公布日期 |
2014.12.25 |
| 申请号 |
US201414242769 |
申请日期 |
2014.04.01 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
KIM Jung Pill;DONG Xiangyu;SUH Jungwon |
| 分类号 |
G11C11/401;G11C11/406 |
主分类号 |
G11C11/401 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory refresh method within a memory controller, comprising:
checking a first retention state corresponding to a first memory address and a second retention state corresponding to a second memory address; and performing a refresh operation on a row corresponding to the second memory address when the second retention state indicates a weak retention state, in which the first memory address corresponds to a refresh counter address, and the second memory address corresponds to a complementary address of the refresh counter address. |
| 地址 |
San Diego CA US |
