发明名称 OVERCURRENT DETECTION APPARATUS AND INTELLIGENT POWER MODULE USING SAME
摘要 An overcurrent detection apparatus includes a sense emitter current detection unit that detects a sense emitter current output from a sense emitter of an IGBT as a sense emitter voltage, and a comparison unit that detects an overcurrent by comparing the sense emitter voltage detected by the sense emitter current detection unit with a threshold voltage. The overcurrent detection apparatus also includes a correction current detection unit that detects a correction current corresponding to a current flowing between a gate and the sense emitter of the IGBT as a corrected voltage; and a voltage correction unit that calculates a sense emitter corrected voltage by subtracting the correction voltage detected by the corrected current detection unit from the sense emitter voltage detected by the sense emitter current detection unit, and supplies the sense emitter corrected voltage to the comparison unit.
申请公布号 US2014375333(A1) 申请公布日期 2014.12.25
申请号 US201414478568 申请日期 2014.09.05
申请人 FUJI ELECTRIC CO., LTD. 发明人 MINAGAWA Kei
分类号 G01R17/02;G01R19/00 主分类号 G01R17/02
代理机构 代理人
主权项 1. An apparatus, comprising. a sense emitter current detection unit configured to detect a sense emitter current output from a sense emitter of an insulated gate bipolar transistor as a sense emitter voltage; a correction current detection unit configured to detect a correction current corresponding to a current that flows between a gate and the sense emitter of the insulated gate bipolar transistor as a corrected voltage; a voltage correction unit configured to calculate a sense emitter corrected voltage by subtracting the corrected voltage from the sense emitter voltage; and a comparison unit configured to detect an overcurrent by comparing the sense emitter corrected voltage with a reference voltage.
地址 Kawasaki-shi JP