| 发明名称 |
MATERIALS FOR NEAR FIELD TRANSDUCERS AND NEAR FIELD TRANSDUCERS CONTAINING SAME |
| 摘要 |
A method of forming a near field transducer (NFT) layer, the method including depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer includes the film of the primary element doped with the at least one secondary element. |
| 申请公布号 |
US2014374376(A1) |
申请公布日期 |
2014.12.25 |
| 申请号 |
US201414313551 |
申请日期 |
2014.06.24 |
| 申请人 |
SEAGATE TECHNOLOGY LLC |
发明人 |
Jayashankar Sethuraman;Kautzky Michael C. |
| 分类号 |
G11B5/40;G11B5/31 |
主分类号 |
G11B5/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a near field transducer (NFT) layer, the method comprising:
depositing a film of a primary element, the film having a film thickness and a film expanse; and implanting at least one secondary element into the primary element, wherein the NFT layer comprises the film of the primary element doped with the at least one secondary element. |
| 地址 |
CUPERTINO CA US |
