SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A semiconductor device manufacturing method which eliminates the possibility that when a film is processed several times, a thin photoresist film is made over a pattern used as an alignment mark, etc. and the pattern is exposed from the photoresist film and removed in a processing step, in order to improve the reliability of a semiconductor device. Patterns used as alignment marks, etc. are linear trenches as openings in a conductive film made over a semiconductor substrate, thereby preventing the photoresist film over the conductive film from flowing toward the openings in the conductive film.

主权项

1. A semiconductor device manufacturing method comprising the steps of:
(a1) providing a semiconductor substrate; (b1) forming a first film to cover a first region and a second region of a main surface of the semiconductor substrate; (c1) processing the first film in the first region to form a first pattern as an opening in the first film; (d1) after the step (c1) above, forming a photoresist film to cover the first region and cover a portion of the first film in the second region; (e1) performing etching using the photoresist film as a mask to process the first film in the second region; and (f1) after the step (e1) above, inspecting the first pattern, wherein a portion of the first region which is covered by the first film has a larger area than the first pattern in a plan view.