发明名称 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having a cover electrode which prevents migration of Ag with an Ag-containing full electrode, which preserves the effectiveness of migration prevention and improves light extraction efficiency.SOLUTION: A semiconductor element 1 comprises: a semiconductor laminate 3; Ag-containing full electrodes 41 provided on a top face of a p-type semiconductor layer 33; cover electrodes 42 each of which is provided to cover a surface of each full electrode 41 and contacts the top face of the p-type semiconductor layer 33 at an outer edge of each full electrode 41 and is composed of an Al-based metal material; a p-side electrode 4p provided on a part of a surface of the cover electrode 42; a metal oxide film 43 which covers the remaining surface of the cover electrode 42 and contains an oxide of the metal material which composes the cover electrode 42; and an insulation film 6 which covers a surface of the metal oxide film 43 and is composed of an oxide.
申请公布号 JP2014241401(A) 申请公布日期 2014.12.25
申请号 JP20140097945 申请日期 2014.05.09
申请人 NICHIA CHEM IND LTD 发明人 KAWAGUCHI HIROSHI;YONEDA AKINORI;KASAI HISATSUGU;KASHIMOTO KAZUKI;ITASAKA MASAFUMI
分类号 H01L33/40;H01L33/38 主分类号 H01L33/40
代理机构 代理人
主权项
地址