发明名称 PLASMA TREATMENT METHOD
摘要 PROBLEM TO BE SOLVED: To perform plasma treatment with less damage with plasma of a low plasma potential and a more stabilized high density.SOLUTION: A plasma treatment device comprises: a planar antenna element 142 which is disposed via a tabular dielectric 104 while opposing a mounting table within a treatment chamber 102; and a shield member 160 covering the antenna element. The antenna element is in a planar eddy coil shape wound around a center axis of the tabular dielectric. Both ends are opened and a midpoint of a length in a direction of winding is defined as a ground point. Within the treatment chamber, doughnut-shaped plasma is generated by resonating the antenna element with a 1/2 wavelength of a high frequency in such a manner that electrical lengths of a portion wound inside of the ground point and a portion wound outside of the ground point become equal by adjusting a distance between the antenna element and the shield member and adjusting stray capacitance between them. Plasma treatment is then applied to a substrate to be treated on the mounting table.
申请公布号 JP2014241285(A) 申请公布日期 2014.12.25
申请号 JP20140148360 申请日期 2014.07.18
申请人 MEIKO ELECTRONICS CO LTD 发明人 YONEYAMA SHIMAO
分类号 H05H1/46;C23C16/507;H01L21/205;H01L21/3065 主分类号 H05H1/46
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