ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS

摘要

An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer.

主权项

1. A device structure, comprising:
a semipolar or nonpolar III-Nitride active layer formed on or above an at least partially relaxed III-nitride layer, wherein the semipolar or nonpolar III-Nitride active layer is strained with respect to the at least partially relaxed III-nitride layer.