Chemical Mechanical Polishing (CMP) Composition for Shallow Trench Isolation (STI) Applications and Methods of Making Thereof

摘要

Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.

主权项

1. A chemical mechanical polishing (CMP) composition having reduced defects, comprising:
cerium oxide slurry having trace metal contaminants; polymeric electrolyte; biocide; chemical chelator selected from the group consisting of chemical chelator selected from the group consisting of organic acids; amino acids; organic acid derivatives; amino acid derivatives; organic amine compounds; organic sulfuric acids; organic phosphoric acids; organic chelators containing multi-type function groups; pyridine and its derivatives; bipyridine and its derivatives; terpyridine and its derivatives; quinoline and its derivatives; hydroxyl quinoline and its derivatives; and combinations thereof; and deionized water as a solvent; wherein the chemical chelator reacts with trace metal ions in trace metal contaminants to form metal ion-chelator complexes.