发明名称 SUBSTRATE PREPARATION FOR SELECTIVE AREA DEPOSITION
摘要 A method of producing a patterned inorganic thin film element includes providing a substrate having a patterned thin layer of polymeric inhibitor on the surface. The substrate and the patterned thin layer of polymeric inhibitor are exposed to a highly reactive oxygen process. An inorganic thin film layer is deposited on the substrate in areas without inhibitor using an atomic layer deposition process.
申请公布号 US2014377955(A1) 申请公布日期 2014.12.25
申请号 US201313923413 申请日期 2013.06.21
申请人 Ellinger Carolyn R.;Nelson Shelby F.;Sieber Kurt D. 发明人 Ellinger Carolyn R.;Nelson Shelby F.;Sieber Kurt D.
分类号 H01L21/308 主分类号 H01L21/308
代理机构 代理人
主权项 1. A method of producing a patterned thin film element comprising: providing a substrate having a patterned layer of polymeric inhibitor on the surface thereof; exposing the substrate and the patterned layer of polymeric inhibitor to a highly reactive oxygen process, the polymeric inhibitor retaining its ability to inhibit growth after being exposed to the highly reactive oxygen process; and depositing an inorganic thin film layer on the substrate using an atomic layer deposition process to form a patterned inorganic thin film layer on the substrate in areas without the polymeric inhibitor.
地址 Rochester NY US