发明名称 |
SUBSTRATE PREPARATION FOR SELECTIVE AREA DEPOSITION |
摘要 |
A method of producing a patterned inorganic thin film element includes providing a substrate having a patterned thin layer of polymeric inhibitor on the surface. The substrate and the patterned thin layer of polymeric inhibitor are exposed to a highly reactive oxygen process. An inorganic thin film layer is deposited on the substrate in areas without inhibitor using an atomic layer deposition process. |
申请公布号 |
US2014377955(A1) |
申请公布日期 |
2014.12.25 |
申请号 |
US201313923413 |
申请日期 |
2013.06.21 |
申请人 |
Ellinger Carolyn R.;Nelson Shelby F.;Sieber Kurt D. |
发明人 |
Ellinger Carolyn R.;Nelson Shelby F.;Sieber Kurt D. |
分类号 |
H01L21/308 |
主分类号 |
H01L21/308 |
代理机构 |
|
代理人 |
|
主权项 |
1. A method of producing a patterned thin film element comprising:
providing a substrate having a patterned layer of polymeric inhibitor on the surface thereof; exposing the substrate and the patterned layer of polymeric inhibitor to a highly reactive oxygen process, the polymeric inhibitor retaining its ability to inhibit growth after being exposed to the highly reactive oxygen process; and depositing an inorganic thin film layer on the substrate using an atomic layer deposition process to form a patterned inorganic thin film layer on the substrate in areas without the polymeric inhibitor. |
地址 |
Rochester NY US |