METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

A method of manufacturing a semiconductor device, including forming a molding layer; forming a damascene mask layer and mask layer on the molding layer; forming a mask layer pattern by etching the mask layer; forming a damascene pattern by partially etching the damascene mask layer; forming a damascene mask layer on the mask layer pattern to bury the damascene pattern; forming a damascene pattern partially overlapping the damascene pattern by etching the damascene mask layer and the mask layer pattern; connecting the damascene pattern and the damascene pattern by removing a portion of the mask layer pattern exposed by the damascene pattern; forming a damascene mask layer on the damascene mask layer to bury the damascene pattern; and forming a trench under the damascene patterns by etching the damascene mask layers and the molding layer using remaining portions of the mask layer pattern.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a molding layer on a substrate; sequentially forming a first damascene mask layer and a first mask layer on the molding layer; forming a first mask layer pattern by etching the first mask layer; forming a first damascene pattern by partially etching the first damascene mask layer using the first mask layer pattern as a mask; forming a second damascene mask layer on the first mask layer pattern to bury the first damascene pattern; forming a second damascene pattern partially overlapping the first damascene pattern by etching the second damascene mask layer and the first mask layer pattern; connecting the first damascene pattern and the second damascene pattern by removing a portion of the first mask layer pattern exposed by the second damascene pattern; forming a third damascene mask layer on the second damascene mask layer to bury the second damascene pattern; and forming a trench extending from the first and second damascene patterns by etching the third, second, and first damascene mask layers and the molding layer using remaining portions of the first mask layer pattern.