| 发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE |
| 摘要 |
A fin type active pattern is formed on a substrate. The fin type active pattern projects from the substrate. A diffusion film is formed on the fin type active pattern. The diffusion film includes an impurity. The impurity is diffused into a lower portion of the fin type active pattern to form a punch-through stopper diffusion layer. |
| 申请公布号 |
US2014377926(A1) |
申请公布日期 |
2014.12.25 |
| 申请号 |
US201414294287 |
申请日期 |
2014.06.03 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM Tae-Gon;Kang Jong-Hoon;Jo Eun-Young;Choi Gil-Heyun;Choi Han-Mei |
| 分类号 |
H01L21/225;H01L29/66 |
主分类号 |
H01L21/225 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor device, comprising:
forming a fin type active pattern that projects from a substrate; forming a diffusion film on the fin type active pattern, the diffusion film including an impurity; and diffusing the impurity into a lower portion of the fin type active pattern to form a punch-through stopper diffusion layer. |
| 地址 |
Suwon-si KR |
