| 摘要 |
An electronic component includes a high voltage switching transistor encased in a package. The high voltage switching transistor comprises a source electrode, a gate electrode, and a drain electrode all on a first side of the high voltage switching transistor. The source electrode is electrically connected to a conducting structural portion of the package. Assemblies using the abovementioned transistor with another transistor can be formed, where the source of one transistor can be electrically connected to a conducting structural portion of a package containing the transistor and a drain of the second transistor is electrically connected to the second conductive structural portion of a package that houses the second transistor. Alternatively, the source of the second transistor is electrically isolated from its conductive structural portion, and the drain of the second transistor is electrically isolated from its conductive structural portion. |
| 主权项 |
1. A method of forming an assembly, comprising:
providing a first transistor comprising a first source, the first transistor encased in a first package, the first package comprising a first conductive structural portion, and providing a second transistor comprising a second source and a second drain, the second transistor encased in a second package, the second package comprising a second conductive structural portion, wherein the first source is electrically connected to the first conductive structural portion, the second source is electrically isolated from the second conductive structural portion, and the second drain is electrically isolated from the second conductive structural portion. |
