PRECURSOR COMPOSITION OF OXIDE SEMICONDUCTOR AND THIN FILM TRANSISTOR SUBSTRATE INCLUDING OXIDE SEMICONDUCTOR

摘要

A thin film transistor substrate according to an exemplary embodiment of the present invention includes a semiconductor layer including metal disposed on an insulating substrate, a gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode overlapping the semiconductor layer, wherein the metal in the semiconductor layer comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio;(R,R[mol%]=[In][In+Zn+Sn]×100);of indium (In) to the metals in the semiconductor layer is less than about 20%, and more specifically, the molar ratio;(R,R[mol%]=[In][In+Zn+Sn]×100);of indium (In) of the metals in the semiconductor layer is about 5% to about 13%.

主权项

1. A method of manufacturing a thin film transistor substrate, comprising:
preparing a precursor composition solution of an oxide semiconductor including a precursor composition of the oxide semiconductor and a solvent, applying the precursor composition solution of the oxide semiconductor to a substrate, and heat treating the applied precursor composition solution of the oxide semiconductor, wherein the metal in the precursor composition of the oxide semiconductor comprises indium (In), zinc (Zn), and tin (Sn), and a molar ratio(R,R[mol%]=[In][In+Zn+Sn]×100)of indium (In) of the metals in the precursor composition of the oxide semiconductor is about 5% to about 13%.