| 发明名称 |
SEMICONDUCTOR LIGHT-EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
A semiconductor light-emitting diode, including: an n-GaN layer, a quantum well layer, an electron blocking layer, and a p-GaN layer, which are sequentially stacked on a substrate. The electron blocking layer includes at least one first AlGaN layer and at least one second AlGaN layer. The first AlGaN layer and the second AlGaN layer are alternately stacked. The adjacent first and second AlGaN layers have different Al component. |
| 申请公布号 |
US2014374700(A1) |
申请公布日期 |
2014.12.25 |
| 申请号 |
US201414479274 |
申请日期 |
2014.09.06 |
| 申请人 |
HC SEMITEK CORPORATION |
发明人 |
LI Wenbing;WANG Jiangbo;DONG Binzhong;YANG Chunyan |
| 分类号 |
H01L33/00;H01L33/14;H01L33/32;H01L33/06 |
主分类号 |
H01L33/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor light-emitting diode, comprising: an n-GaN layer, a quantum well layer, an electron blocking layer, and a p-GaN layer, which are sequentially stacked on a substrate; wherein the electron blocking layer comprises at least one first AlGaN layer and at least one second AlGaN layer, the first AlGaN layer and the second AlGaN layer are alternately stacked, and adjacent first and second AlGaN layers have different Al component. |
| 地址 |
Wuhan CN |
