| 发明名称 |
VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
A variable resistance memory device and a method of manufacturing the same are provided. The variable resistance memory device includes a multi-layered insulating layer formed on a semiconductor substrate on which a lower electrode is formed, and including a plurality of holes of which diameters are increased at a first height or higher, a variable resistance material layer formed on the lower electrode to a second height of each of the holes, and an upper electrode formed on the variable resistance material layer to be buried in each of the holes. |
| 申请公布号 |
US2014374684(A1) |
申请公布日期 |
2014.12.25 |
| 申请号 |
US201314046549 |
申请日期 |
2013.10.04 |
| 申请人 |
SK hynix Inc. |
发明人 |
JUNG Ha Chang;LEE Eun Hyup |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A variable resistance memory device, comprising:
a multi-layered insulating layer formed on a semiconductor substrate on which a lower electrode is formed, and including a plurality of holes of which diameters are increased at a first height or higher; a variable resistance material layer formed on the lower electrode to a second height of each of the holes; and an upper electrode formed on the variable resistance material layer to be buried in each of the holes. |
| 地址 |
Gyeonggi-do KR |
