METHODS AND CIRCUITS FOR BULK ERASE OF RESISTIVE MEMORY

摘要

A resistive random access memory integrated circuit for use as a mass storage media and adapted for bulk erase by substantially simultaneously switching all memory cells to one of at least two possible resistive states. Bulk switching is accomplished by biasing all bottom electrodes within an erase area to a voltage lower than that of the top electrodes, wherein the erase area can comprise the entire memory array of the integrated circuit or else a partial array. Alternatively the erase area may be a single row and, upon receiving the erase command, the row address is advanced automatically and the erase step is repeated until the entire array has been erased.

主权项

1. A resistive random access memory integrated circuit (ReRAM IC) having an array of memory cells and adapted for use as a mass storage memory and further adapted for rapid bulk erase of all data stored therein by switching all cells in at least an area of the array substantially simultaneously to the same of at least two resistive states.