发明名称 Extreme Ultraviolet Lithography Mask and Multilayer Deposition Method for Fabricating Same
摘要 A mask, method of fabricating same, and method of using same are disclosed. In an example, a mask includes a substrate and a reflective multilayer coating deposited over the substrate. The reflective multilayer coating is formed by positioning the substrate such that an angle α is formed between a normal line of the substrate and particles landing on the substrate and rotating the substrate about an axis that is parallel with a landing direction of the particles. In an example, reflective multilayer coating includes a first layer and a second layer deposited over the first layer. A phase defect region of the reflective multilayer coating includes a first deformation in the first layer at a first location, and a second deformation in the second layer at a second location, the second location laterally displaced from the first location.
申请公布号 US2014377693(A1) 申请公布日期 2014.12.25
申请号 US201414479411 申请日期 2014.09.08
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Lu Yen-Cheng;YU SHINN-SHENG;Yen Anthony
分类号 G03F1/24;G03F1/52 主分类号 G03F1/24
代理机构 代理人
主权项 1. A method for forming at least a reflective layer over a substrate, the method comprising: tilting the substrate; rotating the substrate; depositing a first layer; depositing a second layer; and wherein the substrate is tilted and rotated during the depositing of the first and the second layers such that a lateral location of a deformation in the second layer is displaced by a distance from a lateral location of a deformation in the first layer.
地址 Hsin-Chu TW