发明名称 |
Extreme Ultraviolet Lithography Mask and Multilayer Deposition Method for Fabricating Same |
摘要 |
A mask, method of fabricating same, and method of using same are disclosed. In an example, a mask includes a substrate and a reflective multilayer coating deposited over the substrate. The reflective multilayer coating is formed by positioning the substrate such that an angle α is formed between a normal line of the substrate and particles landing on the substrate and rotating the substrate about an axis that is parallel with a landing direction of the particles. In an example, reflective multilayer coating includes a first layer and a second layer deposited over the first layer. A phase defect region of the reflective multilayer coating includes a first deformation in the first layer at a first location, and a second deformation in the second layer at a second location, the second location laterally displaced from the first location. |
申请公布号 |
US2014377693(A1) |
申请公布日期 |
2014.12.25 |
申请号 |
US201414479411 |
申请日期 |
2014.09.08 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lu Yen-Cheng;YU SHINN-SHENG;Yen Anthony |
分类号 |
G03F1/24;G03F1/52 |
主分类号 |
G03F1/24 |
代理机构 |
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代理人 |
|
主权项 |
1. A method for forming at least a reflective layer over a substrate, the method comprising:
tilting the substrate; rotating the substrate; depositing a first layer; depositing a second layer; and wherein the substrate is tilted and rotated during the depositing of the first and the second layers such that a lateral location of a deformation in the second layer is displaced by a distance from a lateral location of a deformation in the first layer. |
地址 |
Hsin-Chu TW |