| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve operational reliability of a semiconductor device.SOLUTION: The semiconductor device comprises a fuse FS1 composed of a conductive film, an insulating layer IL1 covering the fuse FS1 and composed of one or a plurality of interlayer insulating films, and a polyimide film PI1 provided on the insulating layer IL1. The insulating layer IL1 includes a recess RC12 overlapping the fuse FS1 and a recess RC11 provided on a bottom surface of the recess RC12 and smaller than the recess RC12 in a plan view. The polyimide film PI1 is provided with an opening OP1 through which the recess RC11 is exposed.</p> |
