| 发明名称 |
FLOATING GATE FORMING PROCESS |
| 摘要 |
A floating gate forming process includes the following steps. A substrate containing active areas isolated from each other by isolation structures protruding from the substrate is provided. A first conductive material is formed to conformally cover the active areas and the isolation structure. An etch back process is performed on the first conductive material to respectively form floating gates separated from each other in the active areas. |
| 申请公布号 |
US2014377945(A1) |
申请公布日期 |
2014.12.25 |
| 申请号 |
US201313923374 |
申请日期 |
2013.06.21 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Hsu Cheng-Yuan;LI ZHAOBING;REN CHI;Tsai Ching-Long;Cheng Wei |
| 分类号 |
H01L21/28 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A floating gate forming process, comprising:
providing a substrate containing active areas isolated from each other by isolation structures protruding from the substrate; forming a first conductive material conformally covering the active areas and the isolation structures; forming a buffer layer on the first conductive material; performing an etch back process on the buffer layer and the first conductive material to respectively form floating gates separated from each other in the active areas. |
| 地址 |
Hsin-Chu City TW |
