METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

摘要

A method for manufacturing a nonvolatile semiconductor storage device according to an embodiment includes laminating a first wire extending in a first direction, and a film made into a variable resistance element made of a metallic material, which are laminated in order on a semiconductor substrate, dividing, into a plurality of pieces, the film made into the variable resistance element, in the first direction and a second direction, forming an interlayer insulating film between the plurality of pieces formed by dividing the film made into the variable resistance element in the second direction, and oxidizing the metallic material of the film made into the variable resistance element, and laminating an upper electrode and a second wire extending in the second direction, which are laminated in order on the film made into the variable resistance element and the interlayer insulating film.

主权项

1. A method for manufacturing a nonvolatile semiconductor storage device, comprising:
laminating a first wire extending in a first direction, a film made into a first non-ohmic element, and a film made into a first variable resistance element made of a metallic material, which are laminated in order on a semiconductor substrate extending in the first direction and a second direction intersecting the first direction; dividing, into a plurality of pieces, the film made into the first variable resistance element and the film made into the first non-ohmic element, in the first direction and the second direction; forming a first interlayer insulating film between the plurality of pieces formed by dividing the film made into the first variable resistance element and the film made into the first non-ohmic element in the first direction and the second direction; planarizing an upper surface of the first interlayer insulating film and the film made into the first variable resistance element; oxidizing the metallic material of the film made into the first variable resistance element; and laminating a first upper electrode extending in the second direction and a second wire extending in the second direction, which are laminated in order on the film made into the first variable resistance element and the first interlayer insulating film.